G. Kelner, S.C. Binari, K.J. Sleger, Hong Jin Kong
Abstract
β-SiC MESFET and buried-gate JFET structures have been fabricated and evaluated. Both structures employ an epitaxial n-on-p SiC layer grown by chemical vapor deposition on a p-type Si
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β-SiC MESFET and buried-gate JFET structures have been fabricated and evaluated. Both structures employ an epitaxial n-on-p SiC layer grown by chemical vapor deposition on a p-type Si
Key concepts: JFET, MESFET, Materials science, Optoelectronics, Epitaxy, Chemical vapor deposition, Layer (electronics), Electrical engineering