Moving-Mask UV Lithography for 3-Dimensional Positive-And Negative-Tone Thick Photoresist Microstructuring
Yoshikazu Hirai, Yoshiteru Inamoto, Koji Sugano, Toshiyuki Tsuchiya, Osamu Tabata
Abstract
Yoshikazu Hirai, Yoshiteru Inamoto, Koji Sugano, Toshiyuki Tsuchiya, Osamu Tabata
Abstract
This paper presents a systematic study on "Moving-mask UV lithography" for 3-D (three- dimensional) micro structuring of positive- and negative-tone thick photoresist and a dedicated UV lithography process simulation. As an application of the moving-mask UV lithography, we propose a novel method to fabricate embedded microfluidic structures using SU-8. Furthermore, we propose a new practical photoresist profile simulation approach adopting the "Fast Marching Method" to consider the photoresist dissolution vector in the development process. Through a series of moving-mask UV lithography experiments, (1) the capability of the moving-mask UV lithography for 3-D microstructuring, and (2) the validity of the proposed photoresist profile simulation, were successfully confirmed.
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This paper presents a systematic study on "Moving-mask UV lithography" for 3-D (three- dimensional) micro structuring of positive- and negative-tone thick photoresist and a dedicated UV lithography process simulation. As an application of the moving-mask UV lithography, we propose a novel method to fabricate embedded microfluidic structures using SU-8. Furthermore, we propose a new practical photoresist profile simulation approach adopting the "Fast Marching Method" to consider the photoresist dissolution vector in the development process. Through a series of moving-mask UV lithography experiments, (1) the capability of the moving-mask UV lithography for 3-D microstructuring, and (2) the validity of the proposed photoresist profile simulation, were successfully confirmed.
Key concepts: Photoresist, Lithography, X-ray lithography, Materials science, Resist, Photolithography, Next-generation lithography, Extreme ultraviolet lithography