2003•Unpublished venueRequires access

Reliability testing of single diffused planar InP/InGaAs avalanche photodiodes

Jihoun Jung, Yong Hwan Kwon, Kyung Sook Hyun, Ilgu Yun

Abstract

This paper presents the reliability of single diffused planar InP/InGaAs avalanche photodiodes (APDs), which is very crucial for the commercial 10-Gb/s optical receiver application. A versatile design for the planar InP/InGaAs APDs and bias-temperature tests to evaluate long-term reliability at temperature from 200 to 250/spl deg/C. The reliability is examined by accelerated life tests for monitoring dark current and breakdown voltage. The lifetime of the APDs is estimated by degradation activation energy. Based on the test results, it is concluded that the single diffused planar InP/InGaAs APDs show sufficient reliability for practical 10-Gb/s optical receivers.

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Available abstract

Key concepts: APDS, Avalanche photodiode, Reliability (semiconductor), Planar, Optoelectronics, Indium gallium arsenide, Materials science, Dark current