Design of a 1D and 3D monolithically integrated piezoresistive MEMS high-g accelerometer

This paper reports on the design of a new monolithically integrated 3-axis high-g accelerometer. It is based on a 1D-sensor which exhibits a sensitivity of 0.65 μV/V/g and a resonant frequency of 1.5 MHz. Both figures are higher than for any piezoresistive high-g accelerometer in the literature or on the market and are due to an unconventional spring-mass-system geometry. The 3-axis accelerometer incorporates the 1D- design to form a single-crystal silicon 3D-sensor.