2008•Journal of Applied PhysicsOpen access

Observation of persistent photoconductivity in bulk gallium arsenide and gallium phosphide samples at cryogenic temperatures using the whispering gallery mode method

John Gideon Hartnett, David Mouneyrac, Jean-Michel Le Floch, Jerzy Krupka, Michael Edmund Tobar, D. Cros

Abstract

Whispering gallery modes in bulk cylindrical gallium arsenide and gallium phosphide samples have been examined both in darkness and under white light at cryogenics temperatures ≤50 K. In both cases persistent photoconductivity was observed after initially exposing semiconductors to white light from a halogen lamp. Photoconductance decay time constants for GaP and GaAs were determined to be 0.900±0.081 and 1.098±0.063 ns, respectively, using this method.

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Key concepts: Gallium phosphide, Gallium arsenide, Photoconductivity, Materials science, Gallium, Semiconductor, Whispering-gallery wave, Optoelectronics