ScholarLens Back to search
1993•Journal of The Electrochemical SocietyOpen access

Oxidation Stacking Faults in SIMOX and Silicon‐on‐Insulator Structures Obtained by Wafer‐Bonding

J. Boussey‐Saïd, Nathalie Guillemot, John Stoemenos, D. Tsoukalas

Open full text 3 citations

Abstract

The growth of stacking faults during thermal oxidation of silicon is investigated for several silicon‐on‐insulator (SOI) structures. The length and density of the oxidation induced stacking faults (OISF) in SIMOX and SOI materials obtained by the wafer‐bonding technique are determined using a new chemical etching method which enables the observation of the OISF's through an optical microscope. For the first time, results obtained from wafer‐bonded and structures are reported.

Open-access reader

About this research paper

What this paper is about

The growth of stacking faults during thermal oxidation of silicon is investigated for several silicon‐on‐insulator (SOI) structures. The length and density of the oxidation induced stacking faults (OISF) in SIMOX and SOI materials obtained by the wafer‐bonding technique are determined using a new chemical etching method which enables the observation of the OISF's through an optical microscope. For the first time, results obtained from wafer‐bonded and structures are reported.

Why it matters

OpenAlex reports 3 citations for this work. Citation counts describe recorded attention and do not establish research quality.

Key contribution

A contribution statement is not available in the OpenAlex record.

Method / approach

Method details are not available in the OpenAlex metadata.

Main findings

Findings are not separately available in the OpenAlex metadata.

Limitations

Limitations are not available in the OpenAlex metadata.

Applications

Application details are not available in the OpenAlex metadata.

Available abstract

The growth of stacking faults during thermal oxidation of silicon is investigated for several silicon‐on‐insulator (SOI) structures. The length and density of the oxidation induced stacking faults (OISF) in SIMOX and SOI materials obtained by the wafer‐bonding technique are determined using a new chemical etching method which enables the observation of the OISF's through an optical microscope. For the first time, results obtained from wafer‐bonded and structures are reported.

Key concepts: Stacking, Silicon on insulator, Wafer, Thermal oxidation, Materials science, Etching (microfabrication), Silicon, Wafer bonding

Related papers

Related paper 1Related paper 2Related paper 3
Back to paper searchBrowse research topicsOriginal source
Oxidation Stacking Faults in SIMOX and Silicon‐on‐Insulator Structures Obtained by Wafer‐Bonding — Research Paper | ScholarLens