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1998•IEEE Transactions on Electron DevicesRequires access

CMOS active pixel image sensors fabricated using a 1.8-V, 0.25-μm CMOS technology

H.‐S. Philip Wong, R.T. Chang, E.F. Crabbé, P. Agnello

Open publisher page 67 citations

Abstract

This paper reports the experimental results of the first CMOS active pixel image sensors (APS) fabricated using a high-performance 1.8-V, 0.25-/spl mu/m CMOS logic technology. No process modifications were made to the CMOS logic technology so that the impact of device scaling on the image sensing performance can be studied. This paper highlights the device and process design considerations required to enable CMOS as an image sensor technology.

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What this paper is about

This paper reports the experimental results of the first CMOS active pixel image sensors (APS) fabricated using a high-performance 1.8-V, 0.25-/spl mu/m CMOS logic technology. No process modifications were made to the CMOS logic technology so that the impact of device scaling on the image sensing performance can be studied. This paper highlights the device and process design considerations required to enable CMOS as an image sensor technology.

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OpenAlex reports 67 citations for this work. Citation counts describe recorded attention and do not establish research quality.

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Available abstract

This paper reports the experimental results of the first CMOS active pixel image sensors (APS) fabricated using a high-performance 1.8-V, 0.25-/spl mu/m CMOS logic technology. No process modifications were made to the CMOS logic technology so that the impact of device scaling on the image sensing performance can be studied. This paper highlights the device and process design considerations required to enable CMOS as an image sensor technology.

Key concepts: CMOS, Image sensor, Pixel, CMOS sensor, Logic gate, Electronic engineering, Process (computing), Electrical engineering

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