2003•Unpublished venueRequires access
Drift-diffusion-based modeling of the non-quasistatic small-signal response for RF-MOSFET applications
Hideki Ueno, S. Jinbou, Hiroaki Kawano, Katsumi Morikawa, N. Nakayama, A. Miura-Mattausch, H. J. Mattausch
Open publisher page 4 citations
Abstract
A non-quasistatic MOSFET model for the small-signal response is developed by including the continuity equation in an analytical way. This model developed based on the drift-diffusion approximation enables us to predict the high-frequency response for any bias conditions. Our result shows that the quasistatic approximation calculates the response approximately correct up to f/sub T//2, which is much higher than the f/sub T//10 previously estimated.