ScholarLens Back to search
1996•IEEE Transactions on Electron DevicesRequires access

A physically-based C/sub ∞/-continuous fully-depleted SOI MOSFET model for analog applications

B. Iniguez, Luiz F. Ferreira, B. Gentinne, Denis Flandre

Open publisher page 57 citations

Abstract

An explicit physically-based fully-depleted SOI MOSFET model for all regions of operation is presented. Under quasistatic operation conditions analytical and C/sub /spl infin//-continuous equations are derived for all transistor large and small-signal parameters. Short-channel effects have been included. The calculated characteristics show good agreement with measurements and smooth transitions between regions of operation.

About this research paper

What this paper is about

An explicit physically-based fully-depleted SOI MOSFET model for all regions of operation is presented. Under quasistatic operation conditions analytical and C/sub /spl infin//-continuous equations are derived for all transistor large and small-signal parameters. Short-channel effects have been included. The calculated characteristics show good agreement with measurements and smooth transitions between regions of operation.

Why it matters

OpenAlex reports 57 citations for this work. Citation counts describe recorded attention and do not establish research quality.

Key contribution

A contribution statement is not available in the OpenAlex record.

Method / approach

Method details are not available in the OpenAlex metadata.

Main findings

Findings are not separately available in the OpenAlex metadata.

Limitations

Limitations are not available in the OpenAlex metadata.

Applications

Application details are not available in the OpenAlex metadata.

Available abstract

An explicit physically-based fully-depleted SOI MOSFET model for all regions of operation is presented. Under quasistatic operation conditions analytical and C/sub /spl infin//-continuous equations are derived for all transistor large and small-signal parameters. Short-channel effects have been included. The calculated characteristics show good agreement with measurements and smooth transitions between regions of operation.

Key concepts: Quasistatic process, MOSFET, Silicon on insulator, Transistor, SIGNAL (programming language), Physics, Channel (broadcasting), Electronic engineering

Related papers

Related paper 1Related paper 2
Back to paper searchBrowse research topicsOriginal source
A physically-based C/sub ∞/-continuous fully-depleted SOI MOSFET model for analog applications — Research Paper | ScholarLens