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Electrical properties of Schottky barrier in MSM-diode structures

S.V. Averine, Y.C. Chan, Y.L. Lam

Open publisher page 4 citations

Abstract

The electrical behavior of metal-semiconductor-metal (MSM) Schottky barrier structures is analyzed by means of current-voltage (I-V) measurements at different temperatures. The reverse characteristics of the Schottky contact are examined by taking into account the barrier height dependence on the electric field and tunneling through the barrier. Under these conditions, the logarithmic dependence of the reverse current on the reverse bias is a linear function and allows us to evaluate the barrier height, saturation current density and junction ideality factor of the MSM-diode Schottky contact.

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What this paper is about

The electrical behavior of metal-semiconductor-metal (MSM) Schottky barrier structures is analyzed by means of current-voltage (I-V) measurements at different temperatures. The reverse characteristics of the Schottky contact are examined by taking into account the barrier height dependence on the electric field and tunneling through the barrier. Under these conditions, the logarithmic dependence of the reverse current on the reverse bias is a linear function and allows us to evaluate the barrier height, saturation current density and junction ideality factor of the MSM-diode Schottky contact.

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Available abstract

The electrical behavior of metal-semiconductor-metal (MSM) Schottky barrier structures is analyzed by means of current-voltage (I-V) measurements at different temperatures. The reverse characteristics of the Schottky contact are examined by taking into account the barrier height dependence on the electric field and tunneling through the barrier. Under these conditions, the logarithmic dependence of the reverse current on the reverse bias is a linear function and allows us to evaluate the barrier height, saturation current density and junction ideality factor of the MSM-diode Schottky contact.

Key concepts: Schottky barrier, Saturation current, Schottky diode, Materials science, Metal–semiconductor junction, Optoelectronics, Electric field, Quantum tunnelling

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