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Normal incident quantum well infrared photodetectors

Chien-Ping Lee, Shiang‐Yu Wang

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Abstract

By using highly doped InGaAs quantum wells, grating-free two color quantum well infrared photodetectors with large normal incidence responses have been demonstrated. These devices have comparable performance as conventional QWIPs with surface gratings but without the complexity of gratings. The TE absorption was found to be enhanced by the use of the highly strained InGaAs quantum wells and the high doping concentration in the wells. Two-color QWIPs have also demonstrated with excellent performance.

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What this paper is about

By using highly doped InGaAs quantum wells, grating-free two color quantum well infrared photodetectors with large normal incidence responses have been demonstrated. These devices have comparable performance as conventional QWIPs with surface gratings but without the complexity of gratings. The TE absorption was found to be enhanced by the use of the highly strained InGaAs quantum wells and the high doping concentration in the wells. Two-color QWIPs have also demonstrated with excellent performance.

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Available abstract

By using highly doped InGaAs quantum wells, grating-free two color quantum well infrared photodetectors with large normal incidence responses have been demonstrated. These devices have comparable performance as conventional QWIPs with surface gratings but without the complexity of gratings. The TE absorption was found to be enhanced by the use of the highly strained InGaAs quantum wells and the high doping concentration in the wells. Two-color QWIPs have also demonstrated with excellent performance.

Key concepts: Quantum well infrared photodetector, Photodetector, Quantum well, Optoelectronics, Grating, Infrared, Materials science, Absorption (acoustics)

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