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High speed linear CCD sensors with pinned photodiode photosites

Eric C. Fox, N. O, D. R. Dykaar, Tony J. Mantell, Robert W. Sabila

Open publisher page 1 citations

Abstract

In this work we describe two families of linear image sensors which incorporate pinned photodiode (PPD) photosites. In a PPD photosite the n/sup +/ region of the conventional photodiode is replaced by an n region and a shallow highly doped p region. The high quantum efficiencies associated with conventional photodiodes are maintained while allowing for large reductions in image lag and fixed pattern noise which are associated with conventional photodiodes.

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What this paper is about

In this work we describe two families of linear image sensors which incorporate pinned photodiode (PPD) photosites. In a PPD photosite the n/sup +/ region of the conventional photodiode is replaced by an n region and a shallow highly doped p region. The high quantum efficiencies associated with conventional photodiodes are maintained while allowing for large reductions in image lag and fixed pattern noise which are associated with conventional photodiodes.

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Available abstract

In this work we describe two families of linear image sensors which incorporate pinned photodiode (PPD) photosites. In a PPD photosite the n/sup +/ region of the conventional photodiode is replaced by an n region and a shallow highly doped p region. The high quantum efficiencies associated with conventional photodiodes are maintained while allowing for large reductions in image lag and fixed pattern noise which are associated with conventional photodiodes.

Key concepts: Photodiode, Image sensor, Optoelectronics, Noise (video), Optics, Physics, Quantum efficiency, Materials science

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