1987•Applied Physics LettersRequires access

Novel high quantum efficiency Si-TaSi2 eutectic photodiodes

B. M. Ditchek, B. G. Yacobi, M. Levinson

Abstract

A high quantum efficiency photodiode has been fabricated using the in situ junctions in a Si-TaSi2 eutectic composite. Due to the three-dimensional distribution of junctions in this photodiode, it yields a nearly constant quantum efficiency of about 50% between 450 and 1000 nm. In addition, the average lateral distance between junctions of only 8 μm gives this novel photodiode an inherently good spatial resolution for photodiode array applications.

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Key concepts: Photodiode, Quantum efficiency, Optoelectronics, Materials science, Eutectic system, Quantum, Optics, Physics