2009•IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICsRequires access
New self heating structures for thermal coupling modeling on multi-fingered SOI power devices
S. Hniki, G. Bertrand, Frédéric Morancho, S. Ortolland, M. Minondo, B. Rauber, C. Raynaud, Alexandre Giry, O. Bon, H. Jaouen
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Abstract
Understanding self-heating effect is essential in order to analyze and model the performances of high power transistors. In this paper a new test structure to model thermal coupling on multi-fingered devices is proposed. This structure allows extracting thermal coupling coefficients between different sources. Applied in the case of NLDEMOS devices on SOI technology, a basic model for these coefficients is deduced. Therefore, the thermal profile of the transistor is well reproduced.