Chemical Etching of InGaAsP / InP DH Wafer

The chemical etching characteristics of double heterostructure (DH) wafers are studied through an mask in the solutions of various etchant systems: ( i ) , ( ii ) , ( iii ) , ( iv ) , and ( v ) . The etching profiles produced in the (001) surface planes are examined by cleaving the DH wafer in orthogonal directions along the (110) and ( 10) planes. The profiles obtained depend on the type of etchant, its component proportion, and etching conditions. Various etching profiles, such as ordinary mesa shaped, reverse mesa shaped, and vertical walls, are formed by stripes being etched in the (001) planes of the DH wafer. The utility of these etching solutions is also discussed for a variety of device applications.