P‐16: Student Poster: New a‐IGZO TFT Pixel Circuit Compensating Threshold Voltage and Mobility for Active‐Matrix OLED with Source Follower Method
Ji‐Hwan Park, Kyeong‐Soo Kang, Jimin Kang, Soo‐Yeon Lee
Abstract
Ji‐Hwan Park, Kyeong‐Soo Kang, Jimin Kang, Soo‐Yeon Lee
Abstract
This paper proposes a new amorphous indium gallium zinc oxide (a‐IGZO) pixel circuit for the simultaneous emission active‐matrix organic light‐emitting diode (AMOLED) displays, which can compensate for the non‐uniform threshold voltage (V TH ) and mobility (μ) of the thin‐film transistor (TFT). The Negative V TH are successfully compensated by adopting the source follower method, and then mobility compensation is carried out by additional voltage adjustment. The OLED current error rate is within 9 % against the V TH and mobility variations in the simulation.
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This paper proposes a new amorphous indium gallium zinc oxide (a‐IGZO) pixel circuit for the simultaneous emission active‐matrix organic light‐emitting diode (AMOLED) displays, which can compensate for the non‐uniform threshold voltage (V TH ) and mobility (μ) of the thin‐film transistor (TFT). The Negative V TH are successfully compensated by adopting the source follower method, and then mobility compensation is carried out by additional voltage adjustment. The OLED current error rate is within 9 % against the V TH and mobility variations in the simulation.
Key concepts: AMOLED, Thin-film transistor, Active matrix, OLED, Materials science, Threshold voltage, Optoelectronics, Compensation (psychology)