2010•Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physicsRequires access
Anomalous capacitance–voltage characteristics of Pt–AlGaN/GaN Schottky diodes exposed to hydrogen
Yoshihiro Irokawa, Nobuyuki Matsuki, Masatomo Sumiya, Yoshiki Sakuma, Takashi Sekiguchi, Toyohiro Chikyo, Yasunobu Sumida, Yoshitaka Nakano
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Abstract
Abstract We have investigated the interaction of hydrogen with Pt‐AlGaN/GaN Schottky barrier diodes (SBDs) using a low‐frequency capacitance‐voltage (C‐V) technique. At a frequency of 1kHz, the C‐V curve in hydrogen shifts toward negative bias values as compared with that in nitrogen. As the frequency decreases from 1kHz to 1Hz, the capacitance in hydrogen significantly increases and the fluctuations of the capacitance are observed. These C‐V characteristics are quite anomalous and have not been reported yet, suggesting the formation of interfacial polarization which could be attributable to hydrogen‐related dipoles. The fluctuation of the capacitance may be related to the alignment of the dipoles. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)