2008•Materials Science and Engineering BRequires access

Recent progress in 3.3kV SiC diodes

Pierre Brosselard, V. Banu, Niels Olsen Saraiva Câmara, Amador Pérez‐Tomás

Open publisher page 6 citations

Abstract

This record does not include an abstract. Use the full-text link above if available.

About this research paper

What this paper is about

An abstract is not available in the OpenAlex record for this paper.

Why it matters

OpenAlex reports 6 citations for this work. Citation counts describe recorded attention and do not establish research quality.

Key contribution

A contribution statement is not available in the OpenAlex record.

Method / approach

Method details are not available in the OpenAlex metadata.

Main findings

Findings are not separately available in the OpenAlex metadata.

Limitations

Limitations are not available in the OpenAlex metadata.

Applications

Application details are not available in the OpenAlex metadata.

Key concepts: Schottky diode, Diode, Materials science, Optoelectronics, Schottky barrier, PIN diode, Reverse leakage current, Metal–semiconductor junction

Back to paper search Browse research topics Original source

Recent progress in 3.3kV SiC diodes — Research Paper | ScholarLens