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High Power Microwave Static Induction Transistor

Y. Kajiwara, Tomoyoshi Yukimoto, K. Shirahata

Open publisher page 4 citations

Abstract

A new type of the transistor called "Static Induction Transistor (SIT)", based on a short channel vertical J-FET structure, has been successfully verified as a promising device for microwave high power operation. The experimental transistors we fabricated have demonstrated the following remarkable features; (1) f/sub max/ of above 5 GHz, (2) amplifying output power of 13 watts at 1GHz and (3) oscillating output power of 100 watts at 200 MHz. These data are the highest among any reported FET transistors at this frequency range.

About this research paper

What this paper is about

A new type of the transistor called "Static Induction Transistor (SIT)", based on a short channel vertical J-FET structure, has been successfully verified as a promising device for microwave high power operation. The experimental transistors we fabricated have demonstrated the following remarkable features; (1) f/sub max/ of above 5 GHz, (2) amplifying output power of 13 watts at 1GHz and (3) oscillating output power of 100 watts at 200 MHz. These data are the highest among any reported FET transistors at this frequency range.

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OpenAlex reports 4 citations for this work. Citation counts describe recorded attention and do not establish research quality.

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Available abstract

A new type of the transistor called "Static Induction Transistor (SIT)", based on a short channel vertical J-FET structure, has been successfully verified as a promising device for microwave high power operation. The experimental transistors we fabricated have demonstrated the following remarkable features; (1) f/sub max/ of above 5 GHz, (2) amplifying output power of 13 watts at 1GHz and (3) oscillating output power of 100 watts at 200 MHz. These data are the highest among any reported FET transistors at this frequency range.

Key concepts: Transistor, Static induction transistor, Multiple-emitter transistor, Power semiconductor device, Electrical engineering, Power (physics), Microwave, Optoelectronics

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