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Estimation of surface potential variation in short channel MOSFET by solving 2D Poisson's equation

Sarmista Sengupta, K. Surekha

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Abstract

Advances in technology leads to dramatic lowering of MOSFET channel length. However short channel effects (SCE) degrade device performance and put a limit to scaling down of device dimensions. Drain Induced Barrier Lowering (DIBL) is such an effect where threshold voltage rolls off and sub-threshold current increases significantly. Study of the surface potential is important for understanding DIBL. In this paper we propose a numerical model to calculate the variation in surface potential by solving the 2-D Poisson's equation, starting from a more accurate expression for the charge distribution. The results agree with the expected trend.

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What this paper is about

Advances in technology leads to dramatic lowering of MOSFET channel length. However short channel effects (SCE) degrade device performance and put a limit to scaling down of device dimensions. Drain Induced Barrier Lowering (DIBL) is such an effect where threshold voltage rolls off and sub-threshold current increases significantly. Study of the surface potential is important for understanding DIBL. In this paper we propose a numerical model to calculate the variation in surface potential by solving the 2-D Poisson's equation, starting from a more accurate expression for the charge distribution. The results agree with the expected trend.

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Available abstract

Advances in technology leads to dramatic lowering of MOSFET channel length. However short channel effects (SCE) degrade device performance and put a limit to scaling down of device dimensions. Drain Induced Barrier Lowering (DIBL) is such an effect where threshold voltage rolls off and sub-threshold current increases significantly. Study of the surface potential is important for understanding DIBL. In this paper we propose a numerical model to calculate the variation in surface potential by solving the 2-D Poisson's equation, starting from a more accurate expression for the charge distribution. The results agree with the expected trend.

Key concepts: MOSFET, Threshold voltage, Poisson's equation, Channel length modulation, Poisson distribution, Channel (broadcasting), Short-channel effect, Drain-induced barrier lowering

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