Performance characterization of integrated gate commutated thyristors

Power semiconductor devices that combine the technology of MOS turn-off and bipolar conduction have been introduced for operation at at high voltage and high current levels. Integrated gate commutated thyristor (IGCT) is a switching device based on the gate turn off thyristor. This paper is devoted to presenting the results from a study performed to examine the operating characteristics of IGCT. The study included experimental measurements of on-state properties and switching characteristics under snubberless hard switching. Turn off losses, device switching delay time, storage time, transition time and on-state losses are characterized. In addition to the experimental results, the paper also presents a brief review of operation of the device and the experimental procedure used in the study.