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2007•TRANSDUCERS 2007 - 2007 International Solid-State Sensors, Actuators and Microsystems ConferenceRequires access

A New Method for High-Rate Deep Dry Etching of Silicate Glass with Variable ETCH Profile

A. Bertz, R. Fendler, R. Schuberth, W. Hentsch, T. Geßner

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Abstract

Compared to the deep reactive ion etching (DRIE) of silicon, the etching of silicate glasses by plasma processing is much more critical. Especially high etch rates as well as highly selective etching are challenging issues in this respect. The following paper reports on a dry etching method offering not only selective and high rate etching but a high flexibility for the etch profile too.

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What this paper is about

Compared to the deep reactive ion etching (DRIE) of silicon, the etching of silicate glasses by plasma processing is much more critical. Especially high etch rates as well as highly selective etching are challenging issues in this respect. The following paper reports on a dry etching method offering not only selective and high rate etching but a high flexibility for the etch profile too.

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Available abstract

Compared to the deep reactive ion etching (DRIE) of silicon, the etching of silicate glasses by plasma processing is much more critical. Especially high etch rates as well as highly selective etching are challenging issues in this respect. The following paper reports on a dry etching method offering not only selective and high rate etching but a high flexibility for the etch profile too.

Key concepts: Deep reactive-ion etching, Etching (microfabrication), Dry etching, Reactive-ion etching, Materials science, Silicate, Silicon, Optoelectronics

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