Effective channel length increased due to switching from ≪110≫ to ≪100≫ orientation for PMOS transistors fabricated by 65 nm CMOS technology

The on-state current of PMOS transistors fabricated on (100) Si substrate can be easily increased by switching fromtoorientation because of faster hole transport. In addition, PMOS transistors also become slightly ldquolongerrdquo. An experimental estimation of the increase of the effective channel length of the order of nm was made in PMOS transistors fabricated by 65 nm low-power CMOS technology. This can cause a noticeable drop in off current for short PMOS transistors.