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2003•Unpublished venueRequires access

Double gate MOSFET subthreshold logic for ultra-low power applications

Jae‐Joon Kim, Roy

Open publisher page 6 citations

Abstract

In this paper, we show that double gate MOSFET is a promising device for subthreshold operations due to its (1) steep subthreshold slope (s) and (2) small gate capacitance in the subthreshold region. It is also shown that long channel DG MOSFET is better than short channel DG MOSFET for subthreshold operations in terms of performance and tolerance to process variation.

About this research paper

What this paper is about

In this paper, we show that double gate MOSFET is a promising device for subthreshold operations due to its (1) steep subthreshold slope (s) and (2) small gate capacitance in the subthreshold region. It is also shown that long channel DG MOSFET is better than short channel DG MOSFET for subthreshold operations in terms of performance and tolerance to process variation.

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OpenAlex reports 6 citations for this work. Citation counts describe recorded attention and do not establish research quality.

Key contribution

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Method / approach

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Available abstract

In this paper, we show that double gate MOSFET is a promising device for subthreshold operations due to its (1) steep subthreshold slope (s) and (2) small gate capacitance in the subthreshold region. It is also shown that long channel DG MOSFET is better than short channel DG MOSFET for subthreshold operations in terms of performance and tolerance to process variation.

Key concepts: Subthreshold conduction, MOSFET, Subthreshold slope, Logic gate, Electrical engineering, Capacitance, Drain-induced barrier lowering, Threshold voltage

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