G. W. Turner, Hyonkwang Choi, B-Y. Tsaur
Abstract
Device-quality GaAs layers have been grown on silicon-on-sapphire (SOS) substrates by molecular beam epitaxy (MBE). Microwave MESFET's (gate length of ~0.8 µm) with transconductance of 140 mS/ mm,f_{\max} = 20GHz, andf_{T} = 8.3GHz have been fabricated in these layers.
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Device-quality GaAs layers have been grown on silicon-on-sapphire (SOS) substrates by molecular beam epitaxy (MBE). Microwave MESFET's (gate length of ~0.8 µm) with transconductance of 140 mS/ mm,f_{\max} = 20GHz, andf_{T} = 8.3GHz have been fabricated in these layers.
Key concepts: MESFET, Transconductance, Molecular beam epitaxy, Microwave, Optoelectronics, Silicon, Gallium arsenide, Materials science