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1989•Applied Physics LettersRequires access

Oxygen-nitrogen complexes in silicon formed by annealing in nitrogen

Akito Hara, Tetsuo Fukuda, Toru Miyabo, Iesada Hirai

Open publisher page 63 citations

Abstract

Oxygen-nitrogen complexes with the shallow donor characteristic represented by the effective mass theory were formed in Czochralski silicon (CZ Si) annealed in a nitrogen atmosphere. By fitting the depth profile of this defect to a diffusion equation, we estimated the nitrogen diffusion coefficient to be about 2×10−6 cm2/s at 1270 °C. This value is 105 times larger than that indicated by previously reported data.

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What this paper is about

Oxygen-nitrogen complexes with the shallow donor characteristic represented by the effective mass theory were formed in Czochralski silicon (CZ Si) annealed in a nitrogen atmosphere. By fitting the depth profile of this defect to a diffusion equation, we estimated the nitrogen diffusion coefficient to be about 2×10−6 cm2/s at 1270 °C. This value is 105 times larger than that indicated by previously reported data.

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Available abstract

Oxygen-nitrogen complexes with the shallow donor characteristic represented by the effective mass theory were formed in Czochralski silicon (CZ Si) annealed in a nitrogen atmosphere. By fitting the depth profile of this defect to a diffusion equation, we estimated the nitrogen diffusion coefficient to be about 2×10−6 cm2/s at 1270 °C. This value is 105 times larger than that indicated by previously reported data.

Key concepts: Nitrogen, Silicon, Annealing (glass), Oxygen, Analytical Chemistry (journal), Diffusion, Chemistry, Materials science

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