2000•Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIERequires access
High-resolution contact lithography by excimer lasers
Huijie Huang, Dunwu Lu, Longlong Du, Yongkai Zhao, Cailai Yuan, Baocai Jiang, Runwen Wang
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Abstract
High-resolution contact lithography was conducted by both 248-nm KrF and 193-nm ArF excimer lasers on PMMA resist. The resist thickness is about 0.5 (mu) . Resolution of 0.5- (mu) lines and spaces was obtained on PMMA resist after KrF excimer laser exposure and subsequent wet development. No self-developing photoetching was observed. However, with ArF excimer laser as the exposure light source, resolution of 0.3-(mu) lines and spaces was obtained on the same resist by direct photoetching under high exposure dose combined with subsequent conventional wet developing process.