1995•Journal of Photopolymer Science and TechnologyOpen access

Si-Containing Positive Resist for ArF Excimer Laser Lithography.

Akiko Kotachi, Satoshi Takechi, Isamu Hanyu, Fujitsu Limited

Abstract

A new chemically amplified Si-containing positive resist designed for ArF excimer laser lithography is described.TMSMMA-OCMA resist (Poly (trimethylsilyl methylmethacrylate-3-oxocyclohexylmethacrylate) with TPS SbFs) worked as a positive resist when exposed by ArF excimer laser and it resolved 0.19 pm Line and Space (LIS) pattern.

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Key concepts: Resist, Excimer laser, Materials science, Lithography, Excimer, Laser, Optics, Electron-beam lithography