Photoelectromagnetic effects on electron and proton irradiated CuInSe2 thin films

Photoelectromagnetic effects in CuInSe2 (CIS) thin films irradiated with 3 MeV electrons or 380 keV protons have been investigated to evaluate the diffusion length. CIS thin films were deposited by radio frequency sputtering. The diffusion length was decreased due to irradiation-induced defects, as the electron fluence exceeded 1×1016 cm−2. The damage constant was estimated from the change in diffusion length before and after irradiation, and was about 4×10−9. After proton irradiation, the diffusion length decreased significantly as the proton fluence exceeded 1×1013 cm−2. The damage constant in this case was estimated to be about 1×10−4–4×10−5.