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Silicon-gate CMOS devices with 300 Å gate oxides

W.S. Lindenberger, A.R. Tretola, W. D. Powell, A. K. Sinha

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Key concepts: Gate oxide, Polycrystalline silicon, Materials science, CMOS, Optoelectronics, Time-dependent gate oxide breakdown, Polysilicon depletion effect, Oxide

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Silicon-gate CMOS devices with 300 Å gate oxides — Research Paper | ScholarLens