ScholarLens Back to search
2014•Unpublished venueRequires access

IRT: A modeling system for single event upset analysis that captures charge sharing effects

K. Foley, N. Seifert, Jyothi Velamala, William G. Bennett, Shashank Gupta

Open publisher page 21 citations

Abstract

IRT (Intel Radiation Tool), a GEANT4 based simulation system for the analysis of radiation-induced single event upsets that accounts for charge sharing effects is described. The capabilities and accuracy of the introduced simulation system are demonstrated against measured results for standard and reduced SER devices, focusing on Reinforcing Charge Collection (RCC) devices. Finally, the physical design space for optimizing soft error rates of RCC and Single Event Upset Tolerant (SEUT) devices is explored.

About this research paper

What this paper is about

IRT (Intel Radiation Tool), a GEANT4 based simulation system for the analysis of radiation-induced single event upsets that accounts for charge sharing effects is described. The capabilities and accuracy of the introduced simulation system are demonstrated against measured results for standard and reduced SER devices, focusing on Reinforcing Charge Collection (RCC) devices. Finally, the physical design space for optimizing soft error rates of RCC and Single Event Upset Tolerant (SEUT) devices is explored.

Why it matters

OpenAlex reports 21 citations for this work. Citation counts describe recorded attention and do not establish research quality.

Key contribution

A contribution statement is not available in the OpenAlex record.

Method / approach

Method details are not available in the OpenAlex metadata.

Main findings

Findings are not separately available in the OpenAlex metadata.

Limitations

Limitations are not available in the OpenAlex metadata.

Applications

Application details are not available in the OpenAlex metadata.

Available abstract

IRT (Intel Radiation Tool), a GEANT4 based simulation system for the analysis of radiation-induced single event upsets that accounts for charge sharing effects is described. The capabilities and accuracy of the introduced simulation system are demonstrated against measured results for standard and reduced SER devices, focusing on Reinforcing Charge Collection (RCC) devices. Finally, the physical design space for optimizing soft error rates of RCC and Single Event Upset Tolerant (SEUT) devices is explored.

Key concepts: Upset, Single event upset, Soft error, Charge sharing, Event (particle physics), Computer science, Radiation, Charge (physics)

Related papers

Related paper 1Related paper 2Related paper 3
Back to paper searchBrowse research topicsOriginal source
IRT: A modeling system for single event upset analysis that captures charge sharing effects — Research Paper | ScholarLens