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1972•Journal of Physics D Applied PhysicsRequires access

The application of the ion microprobe analyser to the measurement of the distribution of boron ions implanted into silicon crystals

R. P. Gittins, D. V. Morgan, G. Dearnaley

Open publisher page 44 citations

Abstract

The distribution in depth of boron ions implanted into silicon crystals has been measured using the French `CAMECA' ion microprobe analyser. Two problems associated with the technique, namely the normalization of the curves and the appearance of a tail on the deeper side of the gaussian, have been studied. The technique provides a rapid and simple procedure for profiling, and determines values of projected range which show good agreement with other techniques.

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What this paper is about

The distribution in depth of boron ions implanted into silicon crystals has been measured using the French `CAMECA' ion microprobe analyser. Two problems associated with the technique, namely the normalization of the curves and the appearance of a tail on the deeper side of the gaussian, have been studied. The technique provides a rapid and simple procedure for profiling, and determines values of projected range which show good agreement with other techniques.

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Available abstract

The distribution in depth of boron ions implanted into silicon crystals has been measured using the French `CAMECA' ion microprobe analyser. Two problems associated with the technique, namely the normalization of the curves and the appearance of a tail on the deeper side of the gaussian, have been studied. The technique provides a rapid and simple procedure for profiling, and determines values of projected range which show good agreement with other techniques.

Key concepts: Analyser, Microprobe, Boron, Ion, Normalization (sociology), Silicon, Materials science, Analytical Chemistry (journal)

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