ScholarLens Back to search
2005•Technical PhysicsRequires access

Static and dynamic characteristics of an MOS-controlled high-power integrated thyristor

I. V. Grekhov, T. T. Mnatsakanov, S. N. Yurkov, A. G. Tandoev, L. S. Kostina

Open publisher page 3 citations

Abstract

A theoretical analysis of physical processes in an MOS-controlled high-power integrated thyristor is presented. The design of this device and the effect of diffusion layer parameters on the I – V characteristic in the on state are considered. A rigorous calculation and estimates of the maximal anode current that can be turned off, which depends on the holding current of the thyristor structure shunted by an external MOS transistor, are made. This current is calculated as a function of the effective resistance, which includes the resistance of the MOS transistor channel and that of gate metallization. Simulation of the current decay shows that, as the MOS transistor is switched on, the current, after a delay, sharply (within several fractions of a microsecond) drops by about 90% and then goes on decreasing more smoothly.

About this research paper

What this paper is about

A theoretical analysis of physical processes in an MOS-controlled high-power integrated thyristor is presented. The design of this device and the effect of diffusion layer parameters on the I – V characteristic in the on state are considered. A rigorous calculation and estimates of the maximal anode current that can be turned off, which depends on the holding current of the thyristor structure shunted by an external MOS transistor, are made. This current is calculated as a function of the effective resistance, which includes the resistance of the MOS transistor channel and that of gate metallization. Simulation of the current decay shows that, as the MOS transistor is switched on, the current, after a delay, sharply (within several fractions of a microsecond) drops by about 90% and then goes on decreasing more smoothly.

Why it matters

OpenAlex reports 3 citations for this work. Citation counts describe recorded attention and do not establish research quality.

Key contribution

A contribution statement is not available in the OpenAlex record.

Method / approach

Method details are not available in the OpenAlex metadata.

Main findings

Findings are not separately available in the OpenAlex metadata.

Limitations

Limitations are not available in the OpenAlex metadata.

Applications

Application details are not available in the OpenAlex metadata.

Available abstract

A theoretical analysis of physical processes in an MOS-controlled high-power integrated thyristor is presented. The design of this device and the effect of diffusion layer parameters on the I – V characteristic in the on state are considered. A rigorous calculation and estimates of the maximal anode current that can be turned off, which depends on the holding current of the thyristor structure shunted by an external MOS transistor, are made. This current is calculated as a function of the effective resistance, which includes the resistance of the MOS transistor channel and that of gate metallization. Simulation of the current decay shows that, as the MOS transistor is switched on, the current, after a delay, sharply (within several fractions of a microsecond) drops by about 90% and then goes on decreasing more smoothly.

Key concepts: Thyristor, Static induction thyristor, Gate turn-off thyristor, MOS-controlled thyristor, Transistor, Materials science, Power semiconductor device, Current (fluid)

Related papers

Related paper 1Related paper 2Related paper 3
Back to paper searchBrowse research topicsOriginal source
Static and dynamic characteristics of an MOS-controlled high-power integrated thyristor — Research Paper | ScholarLens