1991•Electronics LettersRequires access

High-drive CMOS buffer for large capacitive loads

Aria Nosratinia, Majid A. Ahmadi, GRAHAM A. JULLIEN, M. Shridhar

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Abstract

A new CMOS buffer circuit for high capacitive loads is presented. The objective of the design is a high-power, area-efficient buffer to be used in very large scale analogue applications. The buffer can deliver a slew rate of 1.2 V/μs to capacitive loads in excess of 5000 pF. It has a total harmonic distortion of less than 3% at 20kHz. At stand by, it consumes only 125 μA (0.625mW). The buffer occupies 100mils2 of die area in a 3 μm technology.

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What this paper is about

A new CMOS buffer circuit for high capacitive loads is presented. The objective of the design is a high-power, area-efficient buffer to be used in very large scale analogue applications. The buffer can deliver a slew rate of 1.2 V/μs to capacitive loads in excess of 5000 pF. It has a total harmonic distortion of less than 3% at 20kHz. At stand by, it consumes only 125 μA (0.625mW). The buffer occupies 100mils2 of die area in a 3 μm technology.

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Available abstract

A new CMOS buffer circuit for high capacitive loads is presented. The objective of the design is a high-power, area-efficient buffer to be used in very large scale analogue applications. The buffer can deliver a slew rate of 1.2 V/μs to capacitive loads in excess of 5000 pF. It has a total harmonic distortion of less than 3% at 20kHz. At stand by, it consumes only 125 μA (0.625mW). The buffer occupies 100mils2 of die area in a 3 μm technology.

Key concepts: Buffer (optical fiber), Capacitive sensing, CMOS, Buffer amplifier, Total harmonic distortion, Electrical engineering, Slew rate, Power (physics)

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