Gamma Induced Centres in Liquid Phase Epitaxial Gallium Arsenide
Dimitri Alexiev, T.L. Tansley, Kenneth Butcher
Abstract
Dimitri Alexiev, T.L. Tansley, Kenneth Butcher
Abstract
Poole-Frenkel pairs in liquid phase epitaxial Gallium Arsenide induced by gamma irradiation are described. These defects are shown to be easily annealed out, with the device metallisation intact, at 200°C. Preliminary investigations indicate the usefulness of Liquid Phase Epitaxial (LPE) GaAs for high energy particle detection.
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Poole-Frenkel pairs in liquid phase epitaxial Gallium Arsenide induced by gamma irradiation are described. These defects are shown to be easily annealed out, with the device metallisation intact, at 200°C. Preliminary investigations indicate the usefulness of Liquid Phase Epitaxial (LPE) GaAs for high energy particle detection.
Key concepts: Gallium arsenide, Epitaxy, Liquid phase, α particles, Materials science, Gallium, Phase (matter), Optoelectronics