1993•Japanese Journal of Applied PhysicsRequires access

Gamma Induced Centres in Liquid Phase Epitaxial Gallium Arsenide

Dimitri Alexiev, T.L. Tansley, Kenneth Butcher

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Abstract

Poole-Frenkel pairs in liquid phase epitaxial Gallium Arsenide induced by gamma irradiation are described. These defects are shown to be easily annealed out, with the device metallisation intact, at 200°C. Preliminary investigations indicate the usefulness of Liquid Phase Epitaxial (LPE) GaAs for high energy particle detection.

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What this paper is about

Poole-Frenkel pairs in liquid phase epitaxial Gallium Arsenide induced by gamma irradiation are described. These defects are shown to be easily annealed out, with the device metallisation intact, at 200°C. Preliminary investigations indicate the usefulness of Liquid Phase Epitaxial (LPE) GaAs for high energy particle detection.

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Available abstract

Poole-Frenkel pairs in liquid phase epitaxial Gallium Arsenide induced by gamma irradiation are described. These defects are shown to be easily annealed out, with the device metallisation intact, at 200°C. Preliminary investigations indicate the usefulness of Liquid Phase Epitaxial (LPE) GaAs for high energy particle detection.

Key concepts: Gallium arsenide, Epitaxy, Liquid phase, α particles, Materials science, Gallium, Phase (matter), Optoelectronics

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