Photoluminescence from ultrathin ZnSe/CdSe quantum wells
H. Zajicek, P. Juza, E. Abramof, Oleg Pankratov, H. Sitter, M. Helm, G. Brunthaler, W. Faschinger, K. Lischka
Abstract
H. Zajicek, P. Juza, E. Abramof, Oleg Pankratov, H. Sitter, M. Helm, G. Brunthaler, W. Faschinger, K. Lischka
Abstract
Self-limiting monolayer epitaxy has been used to prepare ZnSe/CdSe quantum well structures containing 1–5 monolayers (≊3–15 Å) thick CdSe quantum wells. Photoluminescence spectra of these structures show bright excitonic lines with a blue shift of maximum 870 meV for the 1 monolayer wide quantum wells. Calculations for the energetic positions of the photoluminescence peaks are in good agreement with the experimental data. The full width at half maximum of the photoluminescence lines increases from about 25 meV for the 1 ML quantum wells to about 75 meV for the 3 ML quantum wells.
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Self-limiting monolayer epitaxy has been used to prepare ZnSe/CdSe quantum well structures containing 1–5 monolayers (≊3–15 Å) thick CdSe quantum wells. Photoluminescence spectra of these structures show bright excitonic lines with a blue shift of maximum 870 meV for the 1 monolayer wide quantum wells. Calculations for the energetic positions of the photoluminescence peaks are in good agreement with the experimental data. The full width at half maximum of the photoluminescence lines increases from about 25 meV for the 1 ML quantum wells to about 75 meV for the 3 ML quantum wells.
Key concepts: Photoluminescence, Quantum well, Monolayer, Materials science, Condensed matter physics, Epitaxy, Spectral line, Blueshift