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2002•IEEE Electron Device LettersRequires access

High Q multilayer spiral inductor on silicon chip for 5/spl sim/6 GHz

Guo Lihui, Yu Mingbin, Zhen Chen, He Han, Yi Zhang

Open publisher page 34 citations

Abstract

High Q-values of spiral inductors at frequency around 5/spl sim/6 GHz have been achieved with a multilayer spiral (MLS) structure on a high loss silicon substrate. Compared to a one-layer spiral (OLS) inductor, the Q-value of a 4-nH inductor has been improved by about 80% at 5.65 GHz. The impact of the structure on Q-value and resonant frequency has been analyzed, which shows that an optimal height for the via of MLS inductors should be considered when inductors are designed. The fabrication process is compatible with Cu/SiO/sub 2/ interconnect technology.

About this research paper

What this paper is about

High Q-values of spiral inductors at frequency around 5/spl sim/6 GHz have been achieved with a multilayer spiral (MLS) structure on a high loss silicon substrate. Compared to a one-layer spiral (OLS) inductor, the Q-value of a 4-nH inductor has been improved by about 80% at 5.65 GHz. The impact of the structure on Q-value and resonant frequency has been analyzed, which shows that an optimal height for the via of MLS inductors should be considered when inductors are designed. The fabrication process is compatible with Cu/SiO/sub 2/ interconnect technology.

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OpenAlex reports 34 citations for this work. Citation counts describe recorded attention and do not establish research quality.

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Available abstract

High Q-values of spiral inductors at frequency around 5/spl sim/6 GHz have been achieved with a multilayer spiral (MLS) structure on a high loss silicon substrate. Compared to a one-layer spiral (OLS) inductor, the Q-value of a 4-nH inductor has been improved by about 80% at 5.65 GHz. The impact of the structure on Q-value and resonant frequency has been analyzed, which shows that an optimal height for the via of MLS inductors should be considered when inductors are designed. The fabrication process is compatible with Cu/SiO/sub 2/ interconnect technology.

Key concepts: Inductor, Fabrication, Materials science, Silicon, Substrate (aquarium), Spiral (railway), Optoelectronics, Q factor

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