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2012•Energy ProcediaOpen access

Fast Method to Determine the Structural Defect Density of 156 x 156 mm2 Mc-Si Wafers

R. Bakowskie, G. Kesser, R. Richter, Dominik Lausch, A. Eidner, P. Clemens, K. Petter

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Abstract

Today a remaining challenge is to determine the structural defect density (SDD) on a whole 156 x 156 mm2 multicrystalline (mc) silicon wafer over a timescale of a few minutes. In this contribution a new method is introduced to determine the SDD on large scale mc-Si wafers. The main advantage of the method presented is the possibility to obtain a complete map of the SDD of a 156 x 156 mm2 mc-Si wafer as well as a quantitative SDD analysis of the wafer in just a few minutes. Furthermore, the simple and quick sample preparation as well as the application of standard measurement equipment results in a convenient and cost-effective analysis tool. With these advantages, analysis of SDDs on large quantities of wafers, e.g. across the ingot height or width, can be easily realized in a few hours.

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Today a remaining challenge is to determine the structural defect density (SDD) on a whole 156 x 156 mm2 multicrystalline (mc) silicon wafer over a timescale of a few minutes. In this contribution a new method is introduced to determine the SDD on large scale mc-Si wafers. The main advantage of the method presented is the possibility to obtain a complete map of the SDD of a 156 x 156 mm2 mc-Si wafer as well as a quantitative SDD analysis of the wafer in just a few minutes. Furthermore, the simple and quick sample preparation as well as the application of standard measurement equipment results in a convenient and cost-effective analysis tool. With these advantages, analysis of SDDs on large quantities of wafers, e.g. across the ingot height or width, can be easily realized in a few hours.

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Available abstract

Today a remaining challenge is to determine the structural defect density (SDD) on a whole 156 x 156 mm2 multicrystalline (mc) silicon wafer over a timescale of a few minutes. In this contribution a new method is introduced to determine the SDD on large scale mc-Si wafers. The main advantage of the method presented is the possibility to obtain a complete map of the SDD of a 156 x 156 mm2 mc-Si wafer as well as a quantitative SDD analysis of the wafer in just a few minutes. Furthermore, the simple and quick sample preparation as well as the application of standard measurement equipment results in a convenient and cost-effective analysis tool. With these advantages, analysis of SDDs on large quantities of wafers, e.g. across the ingot height or width, can be easily realized in a few hours.

Key concepts: Wafer, Ingot, Materials science, Silicon, Wafer-scale integration, Optoelectronics, Composite material, Alloy

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