Preparation of multi-crystalline silicon ingot by complex directional solidification method

In this experiment, complex directional solidification (CDS) method was used for preparing multi-crystalline silicon ingot. Meanwhile electromagnetic field was used during refining and solidification process. Experimental results show that an integral silicon ingot with high-quality is successfully fabricated. Analyses reveal that the direction of the most grains is parallel to the axial of silicon ingot, the impurities are separated to the two ends of silicon ingot effectively. The effect of crystal growth and directional solidification times on the purification of metallurgical grade silicon are studied by theoretical calculations.