1982•Crystal Research and TechnologyRequires access
Chemical etching of sapphire
L. A. Marasina, Vladimir V. Malinovsky, I. G. Pichugin, P. I. Prentky
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Abstract
Abstract The results on etching of sapphire substrates with different orientation are discussed. High temperature etching in hydrogen stream and etching in the mixture of H3PO4 and H2SO4 were used in experiments. The relation of etching rates for different sapphire orientations were established in both cases. The conditions of nonselective etching were determined.