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SiO x surface stoichiometry by XPS: A comparison of various methods

R. Alfonsetti, Giovanni de Simone, L. Lozzi, M. Passacantando, P. Picozzi, S. Santucci

Open publisher page 109 citations

Abstract

Abstract The surface stoichiometry of SiO x thin films ( x = 1,…, 2) has been determined by means of x‐ray photoelectron spectroscopy using: (a) two well established methods involving the determination of the area of the O 1s and Si 2p core level peaks and the analysis of the Si 2p line shape, respectively, and (b) the method of the modified Auger parameter recently suggested. The agreement between the different approaches for determination of the stoichiometry of the films indicates the modified Auger parameter procedure as an easy, fast and very reliable method to ascertain the surface stoichiometry of SiO x films.

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What this paper is about

Abstract The surface stoichiometry of SiO x thin films ( x = 1,…, 2) has been determined by means of x‐ray photoelectron spectroscopy using: (a) two well established methods involving the determination of the area of the O 1s and Si 2p core level peaks and the analysis of the Si 2p line shape, respectively, and (b) the method of the modified Auger parameter recently suggested. The agreement between the different approaches for determination of the stoichiometry of the films indicates the modified Auger parameter procedure as an easy, fast and very reliable method to ascertain the surface stoichiometry of SiO x films.

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Available abstract

Abstract The surface stoichiometry of SiO x thin films ( x = 1,…, 2) has been determined by means of x‐ray photoelectron spectroscopy using: (a) two well established methods involving the determination of the area of the O 1s and Si 2p core level peaks and the analysis of the Si 2p line shape, respectively, and (b) the method of the modified Auger parameter recently suggested. The agreement between the different approaches for determination of the stoichiometry of the films indicates the modified Auger parameter procedure as an easy, fast and very reliable method to ascertain the surface stoichiometry of SiO x films.

Key concepts: Stoichiometry, X-ray photoelectron spectroscopy, Auger, Analytical Chemistry (journal), Auger electron spectroscopy, Materials science, Surface (topology), Thin film

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