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1978•Journal of Physics D Applied PhysicsRequires access

Composition of RF-sputtered ZnS films

B R Critchley, P R C Stevens

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Abstract

Rutherford back-scattering and X-ray photoelectron spectroscopy (XPS) have been used to study the stoichiometry and chemical composition of RF-sputtered thin films of ZnS. The results show that stoichiometry of the starting material is no guarantee of stoichiometry in the final film. Films grown in the normal way have a high oxygen content and a Zn/S ratio much greater than unity. XPS shows these films to be a ZnO+ZnS mixture. To obtain low oxygen content and good stoichiometry a good starting vacuum and high throughput of sputtering gas (argon) are necessary.

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What this paper is about

Rutherford back-scattering and X-ray photoelectron spectroscopy (XPS) have been used to study the stoichiometry and chemical composition of RF-sputtered thin films of ZnS. The results show that stoichiometry of the starting material is no guarantee of stoichiometry in the final film. Films grown in the normal way have a high oxygen content and a Zn/S ratio much greater than unity. XPS shows these films to be a ZnO+ZnS mixture. To obtain low oxygen content and good stoichiometry a good starting vacuum and high throughput of sputtering gas (argon) are necessary.

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Available abstract

Rutherford back-scattering and X-ray photoelectron spectroscopy (XPS) have been used to study the stoichiometry and chemical composition of RF-sputtered thin films of ZnS. The results show that stoichiometry of the starting material is no guarantee of stoichiometry in the final film. Films grown in the normal way have a high oxygen content and a Zn/S ratio much greater than unity. XPS shows these films to be a ZnO+ZnS mixture. To obtain low oxygen content and good stoichiometry a good starting vacuum and high throughput of sputtering gas (argon) are necessary.

Key concepts: X-ray photoelectron spectroscopy, Stoichiometry, Sputtering, Argon, Analytical Chemistry (journal), Thin film, Oxygen, Materials science

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