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Microdetermination of silicon dioxide on the surface by sensors based on perfluorinated proton-conducting membranes

S. E. Nikitin, Evgeniy I. Terukov, S. V. Timofeev, N. K. Manabaev

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Abstract

A microdetermination method of silicon dioxide on the silicon surface is studied. In this method, a thin SiO 2 layer is dissolved in an aqueous solution of hydrofluoric acid and then the resulting solution is analyzed with sensors based on perfluorinated proton-conducting membranes. Quantitative determination of silicon dioxide remaining on the silicon surface in a quantity as low as 1 × 10 −6 mol is demonstrated to be feasible.

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What this paper is about

A microdetermination method of silicon dioxide on the silicon surface is studied. In this method, a thin SiO 2 layer is dissolved in an aqueous solution of hydrofluoric acid and then the resulting solution is analyzed with sensors based on perfluorinated proton-conducting membranes. Quantitative determination of silicon dioxide remaining on the silicon surface in a quantity as low as 1 × 10 −6 mol is demonstrated to be feasible.

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Available abstract

A microdetermination method of silicon dioxide on the silicon surface is studied. In this method, a thin SiO 2 layer is dissolved in an aqueous solution of hydrofluoric acid and then the resulting solution is analyzed with sensors based on perfluorinated proton-conducting membranes. Quantitative determination of silicon dioxide remaining on the silicon surface in a quantity as low as 1 × 10 −6 mol is demonstrated to be feasible.

Key concepts: Hydrofluoric acid, Silicon dioxide, Silicon, Membrane, Aqueous solution, Materials science, Proton, Layer (electronics)

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