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New ultra high density EPROM and flash EEPROM with NAND structure cell

F. Masuoka, M. Momodom, Yoichi Iwata, R. Shirota

Abstract

In order to realize ultra high density EPROM and Flash EEPROM, a NAND structure cell is proposed. This new structure is able to shrink cell size without scaling of device dimensions. The NAND structure cell realizes a cell as small as 6.43 µm2using 1.0 µm design rule. As a result, cell area per bit can be reduced by 30% compared with that of a 4M bit EPROM using the conventional structure and the same design rule. It is confirmed that each bit in a NAND cell is able to be programmed selectively. This high performance NAND structure cell is applicable to high density nonvolatile memories as large as 8M bit EPROM and Flash-EEPROM or beyond.

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Available abstract

Key concepts: EEPROM, EPROM, NAND gate, Flash (photography), Non-volatile memory, Cell structure, Computer science, Charge trap flash