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1994•Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and PhenomenaRequires access

Ultra-shallow depth profiling with time-of-flight secondary ion mass spectrometry

J. Bennett, John A. Dagata

Open publisher page 6 citations

Abstract

Time-of-flight secondary ion mass spectrometry (TOF-SIMS) is an efficient, sensitive method for characterizing semiconductor surfaces. In addition, TOF-SIMS can be applied in a depth profiling mode allowing qualitative characterization of the top 20 nm of material. The utility of TOF-SIMS ultra-shallow depth profiling is demonstrated on GaAs substrates that were passivated with P2S5 solutions and oxidized by exposure to an UV/ozone treatment.

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What this paper is about

Time-of-flight secondary ion mass spectrometry (TOF-SIMS) is an efficient, sensitive method for characterizing semiconductor surfaces. In addition, TOF-SIMS can be applied in a depth profiling mode allowing qualitative characterization of the top 20 nm of material. The utility of TOF-SIMS ultra-shallow depth profiling is demonstrated on GaAs substrates that were passivated with P2S5 solutions and oxidized by exposure to an UV/ozone treatment.

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OpenAlex reports 6 citations for this work. Citation counts describe recorded attention and do not establish research quality.

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Available abstract

Time-of-flight secondary ion mass spectrometry (TOF-SIMS) is an efficient, sensitive method for characterizing semiconductor surfaces. In addition, TOF-SIMS can be applied in a depth profiling mode allowing qualitative characterization of the top 20 nm of material. The utility of TOF-SIMS ultra-shallow depth profiling is demonstrated on GaAs substrates that were passivated with P2S5 solutions and oxidized by exposure to an UV/ozone treatment.

Key concepts: Secondary ion mass spectrometry, Time of flight, Mass spectrometry, Profiling (computer programming), Time-of-flight mass spectrometry, Ion, Analytical Chemistry (journal), Materials science

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