2016•Unpublished venueRequires access

Study on copper diffusion barrier materials by Time-of-Flight Secondary Ion Mass Spectrometry (ToF-SIMS)

Yun Wang, Han Wei Teo, Kian Kok Ong, Zhi Qiang Mo, Si Ping Zhao

Abstract

Copper diffusion in two types of barrier layers (SiNx and SiCNx) in different conditions was investigated. The Cu depth profiles were examined by Time-of-Flight Secondary Ion Mass Spectrometry (ToF-SIMS). Different distributions of Cu in barrier layer were observed. This study aims to understand the mechanism behind in order to select an appropriate barrier material for various applications.

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Available abstract

Key concepts: Secondary ion mass spectrometry, Copper, Time of flight, Mass spectrometry, Diffusion, Diffusion barrier, Ion, Static secondary-ion mass spectrometry