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2012•Journal of Contemporary Physics (Armenian Academy of Sciences)Requires access

Modeling free carrier absorption in silicon

R. R. Vardanyan, V. K. Dallakyan, U. Kerst, Christian Boit

Open publisher page 8 citations

Abstract

The different empirical models of light absorption in silicon by free charge carriers in near-infrared and infrared regions are analyzed. An improved empirical model for free carrier absorption in silicon is developed. Results are obtained over the wavelength range from 0.9 μm to 6 μm for n-type, and from 0.9 μm to 8 μm for p-type silicon. The new model is assessed ed by R 2 parameter and the sufficient fitting of the experimental data is presented.

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What this paper is about

The different empirical models of light absorption in silicon by free charge carriers in near-infrared and infrared regions are analyzed. An improved empirical model for free carrier absorption in silicon is developed. Results are obtained over the wavelength range from 0.9 μm to 6 μm for n-type, and from 0.9 μm to 8 μm for p-type silicon. The new model is assessed ed by R 2 parameter and the sufficient fitting of the experimental data is presented.

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Available abstract

The different empirical models of light absorption in silicon by free charge carriers in near-infrared and infrared regions are analyzed. An improved empirical model for free carrier absorption in silicon is developed. Results are obtained over the wavelength range from 0.9 μm to 6 μm for n-type, and from 0.9 μm to 8 μm for p-type silicon. The new model is assessed ed by R 2 parameter and the sufficient fitting of the experimental data is presented.

Key concepts: Silicon, Free carrier absorption, Free carrier, Absorption (acoustics), Infrared, Materials science, Range (aeronautics), Charge carrier

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