Yijing Fu, Karl S. Ni, Philippe M. Fauchet
Abstract
Free carrier absorption is the major obstacle towards achieving optical gain in Er-doped nc-Si. We experimentally demonstrated the suppression of free carrier absorption by multi-slot waveguide. The experimental results agree well with our theoretical calculations.
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Free carrier absorption is the major obstacle towards achieving optical gain in Er-doped nc-Si. We experimentally demonstrated the suppression of free carrier absorption by multi-slot waveguide. The experimental results agree well with our theoretical calculations.
Key concepts: Free carrier absorption, Free carrier, Absorption (acoustics), Optoelectronics, Materials science, Silicon, Doping, Waveguide