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2006•Molecular Crystals and Liquid CrystalsRequires access

Importance of Semiconductor/Insulator Interface for Improving Transistor Properties of OFET

Manabu Yoshida, Sei Uemura, Satoshi Hoshino, Takehito Kodzasa, Toshihide Kamata

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Abstract

In this report, we paid attention to the structural and energetic fluctuations at the semiconductor/insulator interface of field effect transistors. We intended to change these factors independently, and then succeeded in determining the effectiveness of each factor on the charge transport.

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What this paper is about

In this report, we paid attention to the structural and energetic fluctuations at the semiconductor/insulator interface of field effect transistors. We intended to change these factors independently, and then succeeded in determining the effectiveness of each factor on the charge transport.

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OpenAlex reports 2 citations for this work. Citation counts describe recorded attention and do not establish research quality.

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Available abstract

In this report, we paid attention to the structural and energetic fluctuations at the semiconductor/insulator interface of field effect transistors. We intended to change these factors independently, and then succeeded in determining the effectiveness of each factor on the charge transport.

Key concepts: Organic field-effect transistor, Transistor, Semiconductor, Insulator (electricity), Field-effect transistor, Interface (matter), Materials science, Optoelectronics

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Importance of Semiconductor/Insulator Interface for Improving Transistor Properties of OFET — Research Paper | ScholarLens