Determining ionizing radiation using sensors based on organic semiconducting material
Harshil N. Raval, Shree Prakash Tiwari, Ramesh R. Navan, V. Ramgopal Rao
Abstract
Harshil N. Raval, Shree Prakash Tiwari, Ramesh R. Navan, V. Ramgopal Rao
Abstract
The use of organic semiconducting material sensors as total dose radiation detectors is proposed, wherein the change in conductivity of an organic material is measured as a function of ionizing radiation dose. The simplest sensor is a resistor made using organic semiconductor. Furthermore, for achieving higher sensitivity, organic field effect transistor (OFET) is used as a sensor. A solution processed organic semiconductor resistor and an OFET were fabricated using poly 3-hexylthiophene (P3HT), a p-type organic semiconductor material. The devices are exposed to Cobalt-60 radiation for different total dose values. The changes in electrical characteristics indicate the potential of these devices as radiation sensors.
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The use of organic semiconducting material sensors as total dose radiation detectors is proposed, wherein the change in conductivity of an organic material is measured as a function of ionizing radiation dose. The simplest sensor is a resistor made using organic semiconductor. Furthermore, for achieving higher sensitivity, organic field effect transistor (OFET) is used as a sensor. A solution processed organic semiconductor resistor and an OFET were fabricated using poly 3-hexylthiophene (P3HT), a p-type organic semiconductor material. The devices are exposed to Cobalt-60 radiation for different total dose values. The changes in electrical characteristics indicate the potential of these devices as radiation sensors.
Key concepts: Organic field-effect transistor, Organic semiconductor, Optoelectronics, Materials science, Ionizing radiation, Resistor, Semiconductor, Transistor